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| UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES *Complimentary to 2SA965 1 TO-92NL 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector Power Dissipation Collector Current Emitter Current Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO Pc Ic IE TJ TSTG RATING 120 120 5 900 800 -800 150 -55 ~ +150 UNIT V V V mW mA mA C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output capacitance Symbol ICBO IEBO VBR(CEO) VBR(EBO) hFE VCE(sat) VBE fT Cob Test conditions VCB=120V,IE=0 VEB=5V,Ic=0 Ic=10mA,IB=0 IE=1 mA, Ic=0 VCE=5V,Ic=100mA Ic=500mA,IB=50mA VCE=5V,Ic=500mA VCE=5V,Ic=100mA VCB=10V,IE=0,f=1MHz MIN TYP MAX 100 100 UNIT nA nA V V V V MHz pF 120 5 80 240 1.0 1.0 120 30 CLASSIFICATION OF hFE RANK RANGE Y 120-240 O 80-160 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R211-012,A UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC Ic-VCE 1000 Collector Current Ic (mA) 800 600 400 200 0 0 2 4 6 IB=1mA 8 0 10 12 14 15 10 DC Current Gain hFE Common Emitter Ta =25 C 1000 500 300 100 Ta=100 C hFE -Ic Common Emitter VCE=5V Ta=25 C 7 5 4 3 2 Ta=-25 C 50 30 10 3 10 30 100 300 1000 Collector Emitter Voltage VCE (V) VCE(sat) -Ic 0.5 0.3 Common Emitter Ic/IB =10 0.1 0.05 0.03 Ta=25 C Ta=100 C 800 Collector Current Ic (mA) 600 400 Collector Current Ic (mA) Ic-VBE Ta=100 C Collector Emitter Saturation Voltage VCE(sat) Ta=25 C Ta=-25 C 200 Common Emitter VCE=5V Ta= -25 C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 3 10 30 100 300 1000 Collector Current Ic (mA) Safe Operating Area Collector Current Ic (mA) Ic Max. (Continous) Base Emitter Voltage VBE (V) Pc -Ta Collector Power Dissipaton Pc (mW) 1000 800 600 3000 1000 500 300 Ic Max.(Pulse) * 1ms * 10ms * 100ms * 100 DC Operation 50 30 400 200 0 0 20 40 60 80 100 120 140 160 10 *Single Nonrepetitive Pulse 5 Ta=25 C 3 Curve must be derated linearly with increase in temperature 1 0.5 1 3 5 10 30 50 100 300500 1000 Collector Emitter Voltage VcE (V) Ambient Temperature Ta( C) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-012,A UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-012,A UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R211-012,A |
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